Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

Scalability of Schottky barrier metal-oxide-semiconductor transistors

In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifeti...

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

In this article we give an overview over the physical mechanisms involved in the electronic transport in ultrathinbody SOI Schottky-barrier MOSFETs. A strong impact of the SOI and gate oxide thickness on the transistor characteristics is found and explained using experimental as well as simulated data. We elaborate on the influence of scattering in the channel and show that for a significant ba...

Optimization of Schottky barrier carbon nanotube field effect transistors

Carbon nanotube field-effect transistors (CNTFETs) have been studied in recent years as a potential alternative to CMOS devices, because of the capability of ballistic transport. CNTFETs can be fabricated with Ohmic or Schottky type contacts. We focus here on Schottky barrier CNTFETs which operate by modulating the transmission coefficient of carriers through the Schottky barriers at the interf...

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increase...

A Simulation Study and Analysis of advanced Silicon Schottky Barrier Field Effect Transistors